Maximum Continuous Drain Current:
26 A
Transistor Material:
Si
Width:
3.4mm
Transistor Configuration:
Series
Maximum Drain Source Voltage:
30 V
Package Type:
Power 33
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
13 nC @ 10 V
Channel Type:
N
Length:
3.4mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.75mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
9.2 mΩ
FET Feature:
Logic Level Gate
Base Part Number:
FDPC8013
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 30V 13A, 26A 800mW, 900mW Surface Mount Powerclip-33
Input Capacitance (Ciss) (Max) @ Vds:
827pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:
13nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
3V @ 250µA
Series:
PowerTrench®
Package / Case:
8-PowerWDFN
Rds On (Max) @ Id, Vgs:
6.4mOhm @ 13A, 10V
Supplier Device Package:
Powerclip-33
Manufacturer Standard Lead Time:
44 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
800mW, 900mW
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
13A, 26A
Manufacturer:
ON Semiconductor
