Category:
Power MOSFET
Dimensions:
5 x 6 x 0.75mm
Maximum Continuous Drain Current:
26 A, 42 A
Transistor Material:
Si
Width:
6mm
Transistor Configuration:
Series
Maximum Drain Source Voltage:
30 V
Maximum Drain Source Resistance:
15.1 mΩ, 30 mΩ
Package Type:
Power 56
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
7.2 nC @ 10 V, 15.6 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
457 pF@ 15 V, 1050 pF@ 15 V
Length:
5mm
Pin Count:
8
Typical Turn-Off Delay Time:
11.9 ns, 17.4 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.2 W, 2.5 W
Series:
PowerTrench, SyncFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.75mm
Typical Turn-On Delay Time:
5.2 ns, 6.6 ns
Minimum Operating Temperature:
-55 °C
FET Feature:
Logic Level Gate
Base Part Number:
FDMS7620
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 30V 10.1A, 12.4A 1W Surface Mount Power56
Input Capacitance (Ciss) (Max) @ Vds:
608pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:
11nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
3V @ 250µA
Series:
PowerTrench®
Package / Case:
8-PowerWDFN
Rds On (Max) @ Id, Vgs:
20mOhm @ 10.1A, 10V
Supplier Device Package:
Power56
Manufacturer Standard Lead Time:
39 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
1W
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
10.1A, 12.4A
Manufacturer:
ON Semiconductor
