Category:
Power MOSFET
Dimensions:
5.1 x 6.1 x 1.05mm
Maximum Continuous Drain Current:
13 A, 23 A
Transistor Material:
Si
Width:
6.1mm
Transistor Configuration:
Series
Maximum Drain Source Voltage:
30 V
Package Type:
Power 56
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1.1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
21 nC @ 10 V, 27 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1340 pF@ 15 V, 1820 pF@ 15 V
Length:
5.1mm
Pin Count:
8
Typical Turn-Off Delay Time:
20 ns, 23 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.2 W, 2.5 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.05mm
Typical Turn-On Delay Time:
8.2 ns, 9 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
4 mΩ, 10.8 mΩ
FET Feature:
Logic Level Gate
Base Part Number:
FDMS36
Detailed Description:
Mosfet Array 2 N-Channel (Dual) Asymmetrical 30V 13A, 23A 1W Surface Mount Power56
Input Capacitance (Ciss) (Max) @ Vds:
1785pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:
29nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.7V @ 250µA
Series:
PowerTrench®
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
8mOhm @ 13A, 10V
Supplier Device Package:
Power56
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Dual) Asymmetrical
Customer Reference:
Power - Max:
1W
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
13A, 23A
Manufacturer:
ON Semiconductor
