Maximum Continuous Drain Current:
24 A, 60 A
Transistor Material:
Si
Width:
5.9mm
Transistor Configuration:
Series
Priced to Clear:
Yes
Maximum Drain Source Voltage:
30 V
Package Type:
Power 56
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1.1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
17 nC @ 10 V, 24 nC @ 10 V
Channel Type:
N
Length:
5mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2.2 W, 2.5 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, -12 V, +12 V, +20 V
Height:
1.1mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
7.1 mΩ, 14.5 mΩ
FET Feature:
Logic Level Gate
Base Part Number:
FDMS3669
Detailed Description:
Mosfet Array 2 N-Channel (Dual) Asymmetrical 30V 13A, 18A 1W Surface Mount Power56
Input Capacitance (Ciss) (Max) @ Vds:
1605pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:
24nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.7V @ 250µA
Series:
PowerTrench®
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
10mOhm @ 13A, 10V
Supplier Device Package:
Power56
Manufacturer Standard Lead Time:
52 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Dual) Asymmetrical
Customer Reference:
Power - Max:
1W
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
13A, 18A
Manufacturer:
ON Semiconductor
