ON Semiconductor FDME1023PZT
Product Information
Maximum Continuous Drain Current:
2.6 A
Transistor Material:
Si
Width:
1.6mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
20 V
Package Type:
MicroFET Thin
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
5.5 nC @ 4.5 V
Channel Type:
P
Length:
1.6mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.4 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
0.5mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
530 mΩ
FET Feature:
Logic Level Gate
Base Part Number:
FDME10
Detailed Description:
Mosfet Array 2 P-Channel (Dual) 20V 2.6A 600mW Surface Mount 6-MicroFET (1.6x1.6)
Input Capacitance (Ciss) (Max) @ Vds:
405pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:
7.7nC @ 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1V @ 250µA
Series:
PowerTrench®
Package / Case:
6-UFDFN Exposed Pad
Rds On (Max) @ Id, Vgs:
142mOhm @ 2.3A, 4.5V
Supplier Device Package:
6-MicroFET (1.6x1.6)
Manufacturer Standard Lead Time:
30 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 P-Channel (Dual)
Customer Reference:
Power - Max:
600mW
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
2.6A
Manufacturer:
ON Semiconductor
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Yes. Our products in Transistors - FETs, MOSFETs - Arrays category are shipped in lowest possible time.
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We use our internationally recognized delivery partners UPS/DHL. Collection of ET14519195 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14519195.
Yes. We ship FDME1023PZT Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is FDME1023PZT. While 2.6 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.6mm wide. The product offers isolated transistor configuration. It has a maximum of 20 v drain source voltage. The package is a sort of microfet thin. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 0.4v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 5.5 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 1.6mm. It contains 6 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 1.4 w maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of -8 v, +8 v. In addition, the height is 0.5mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 530 mω maximum drain source resistance. The FET features of the product include logic level gate. Base Part Number: fdme10. It features mosfet array 2 p-channel (dual) 20v 2.6a 600mw surface mount 6-microfet (1.6x1.6). The product's input capacitance at maximum includes 405pf @ 10v. The maximum gate charge and given voltages include 7.7nc @ 4.5v. The typical Vgs (th) (max) of the product is 1v @ 250µa. The product powertrench®, is a highly preferred choice for users. Moreover, the product comes in 6-ufdfn exposed pad. It has a maximum Rds On and voltage of 142mohm @ 2.3a, 4.5v. 6-microfet (1.6x1.6) is the supplier device package value. It has typical 30 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type 2 p-channel (dual). The maximum power of the product is 600mw. The product has a 20v drain to source voltage. The continuous current drain at 25°C is 2.6a. The on semiconductor's product offers user-desired applications.
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