ON Semiconductor FDMD84100
Product Information
Category:
Power MOSFET
Dimensions:
5.1 x 3.4 x 0.75mm
Maximum Continuous Drain Current:
21 A
Transistor Material:
Si
Width:
3.4mm
Transistor Configuration:
Common Source
Maximum Drain Source Voltage:
100 V
Package Type:
PQFN
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
11 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
734 pF @ 50 V
Length:
5.1mm
Pin Count:
8
Typical Turn-Off Delay Time:
14 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
23 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.75mm
Typical Turn-On Delay Time:
8.4 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
38 mΩ
FET Feature:
Standard
Base Part Number:
FDMD84
Detailed Description:
Mosfet Array 2 N-Channel (Dual) Common Source 100V 7A 2.1W Surface Mount Power 3.3x5
Input Capacitance (Ciss) (Max) @ Vds:
980pF @ 50V
Gate Charge (Qg) (Max) @ Vgs:
16nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
4V @ 250µA
Series:
PowerTrench®
Package / Case:
8-PowerWDFN
Rds On (Max) @ Id, Vgs:
20mOhm @ 7A, 10V
Supplier Device Package:
Power 3.3x5
Manufacturer Standard Lead Time:
44 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Dual) Common Source
Customer Reference:
Power - Max:
2.1W
Drain to Source Voltage (Vdss):
100V
Current - Continuous Drain (Id) @ 25°C:
7A
Manufacturer:
ON Semiconductor
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Yes. Our products in Transistors - FETs, MOSFETs - Arrays category are shipped in lowest possible time.
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We use our internationally recognized delivery partners UPS/DHL. Collection of ET14519184 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14519184.
Yes. We ship FDMD84100 Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is FDMD84100. It is of power mosfet category . The given dimensions of the product include 5.1 x 3.4 x 0.75mm. While 21 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.4mm wide. The product offers common source transistor configuration. It has a maximum of 100 v drain source voltage. The package is a sort of pqfn. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 11 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 734 pf @ 50 v . Its accurate length is 5.1mm. It contains 8 pins. Whereas, its typical turn-off delay time is about 14 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 23 w maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 0.75mm. In addition, it has a typical 8.4 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 38 mω maximum drain source resistance. The FET features of the product include standard. Base Part Number: fdmd84. It features mosfet array 2 n-channel (dual) common source 100v 7a 2.1w surface mount power 3.3x5. The product's input capacitance at maximum includes 980pf @ 50v. The maximum gate charge and given voltages include 16nc @ 10v. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product powertrench®, is a highly preferred choice for users. Moreover, the product comes in 8-powerwdfn. It has a maximum Rds On and voltage of 20mohm @ 7a, 10v. power 3.3x5 is the supplier device package value. It has typical 44 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type 2 n-channel (dual) common source. The maximum power of the product is 2.1w. The product has a 100v drain to source voltage. The continuous current drain at 25°C is 7a. The on semiconductor's product offers user-desired applications.
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