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This is manufactured by ON Semiconductor. The manufacturer part number is FDMB3800N. The given dimensions of the product include 3 x 1.9 x 0.75mm. The product is available in surface mount configuration. Provides up to 1.6 w maximum power dissipation. In addition, the height is 0.75mm. Furthermore, the product is 1.9mm wide. Its accurate length is 3mm. The package is a sort of wdfn. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. It has a maximum operating temperature of +150 °c. It contains 8 pins. The FET features of the product include logic level gate. Base Part Number: fdmb3800. It features mosfet array 2 n-channel (dual) 30v 4.8a 750mw surface mount 8-mlp, microfet (3x1.9). The product's input capacitance at maximum includes 465pf @ 15v. The maximum gate charge and given voltages include 5.6nc @ 5v. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product powertrench®, is a highly preferred choice for users. Moreover, the product comes in 8-powerwdfn. It has a maximum Rds On and voltage of 40mohm @ 4.8a, 10v. 8-mlp, microfet (3x1.9) is the supplier device package value. It has typical 51 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type 2 n-channel (dual). The maximum power of the product is 750mw. The product has a 30v drain to source voltage. The continuous current drain at 25°C is 4.8a. The on semiconductor's product offers user-desired applications.
For more information please check the datasheets.
You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative ON Semiconductor FDMB3800N and the best services all around the world ET14519058. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, ON Semiconductor FDMB3800N, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as ON Semiconductor, commonly silicon.
Our ON Semiconductor FDMB3800N is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at FDMB3800N. We stock a large inventory containing a wide range of variety ET14519058, differentiates by its unique features ON Semiconductor. We also have discounts for potential customers and let it until most of them avail from ON Semiconductor FDMB3800N. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET14519058 from leading ON Semiconductor, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157
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