Maximum Continuous Drain Current:
7 A
Transistor Material:
Si
Width:
2mm
Transistor Configuration:
Common Drain
Maximum Drain Source Voltage:
20 V
Package Type:
MLP
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.6V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
22 nC @ 4.5 V
Channel Type:
P
Length:
3mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2.2 W, 800 mW
Series:
PowerTrench
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
0.725mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
50 mΩ
FET Feature:
Logic Level Gate
Base Part Number:
FDMB23
Detailed Description:
Mosfet Array 2 P-Channel (Dual) Common Drain 800mW Surface Mount 6-MLP (2x3)
Input Capacitance (Ciss) (Max) @ Vds:
3030pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:
30nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Series:
PowerTrench®
Package / Case:
6-WDFN Exposed Pad
Rds On (Max) @ Id, Vgs:
36mOhm @ 5.7A, 4.5V
Supplier Device Package:
6-MLP (2x3)
Manufacturer Standard Lead Time:
20 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 P-Channel (Dual) Common Drain
Customer Reference:
Power - Max:
800mW
Manufacturer:
ON Semiconductor
This is manufactured by ON Semiconductor. The manufacturer part number is FDMB2308PZ. While 7 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 2mm wide. The product offers common drain transistor configuration. It has a maximum of 20 v drain source voltage. The package is a sort of mlp. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 0.6v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 22 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 3mm. It contains 6 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 2.2 w, 800 mw maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of -12 v, +12 v. In addition, the height is 0.725mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 50 mω maximum drain source resistance. The FET features of the product include logic level gate. Base Part Number: fdmb23. It features mosfet array 2 p-channel (dual) common drain 800mw surface mount 6-mlp (2x3). The product's input capacitance at maximum includes 3030pf @ 10v. The maximum gate charge and given voltages include 30nc @ 10v. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product powertrench®, is a highly preferred choice for users. Moreover, the product comes in 6-wdfn exposed pad. It has a maximum Rds On and voltage of 36mohm @ 5.7a, 4.5v. 6-mlp (2x3) is the supplier device package value. It has typical 20 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type 2 p-channel (dual) common drain. The maximum power of the product is 800mw. The on semiconductor's product offers user-desired applications.
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