Maximum Continuous Drain Current:
3.8 A
Transistor Material:
Si
Width:
2mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
30 V
Package Type:
MLP
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.6V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
3.7 nC @ 5 V
Channel Type:
N
Length:
2mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.5 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
0.8mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
123 mΩ
FET Feature:
Logic Level Gate
Base Part Number:
FDMA3028
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 30V 3.8A 700mW Surface Mount 6-MicroFET (2x2)
Input Capacitance (Ciss) (Max) @ Vds:
375pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:
5.2nC @ 5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Series:
PowerTrench®
Package / Case:
6-VDFN Exposed Pad
Rds On (Max) @ Id, Vgs:
68mOhm @ 3.8A, 4.5V
Supplier Device Package:
6-MicroFET (2x2)
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
700mW
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
3.8A
Manufacturer:
ON Semiconductor
