ON Semiconductor FDG6313N

FDG6313N ON Semiconductor
ON Semiconductor

Product Information

FET Feature:
Logic Level Gate
Base Part Number:
FDG6313
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 25V 500mA 300mW Surface Mount SC-88 (SC-70-6)
Input Capacitance (Ciss) (Max) @ Vds:
50pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:
2.3nC @ 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Drain to Source Voltage (Vdss):
25V
Package / Case:
6-TSSOP, SC-88, SOT-363
Rds On (Max) @ Id, Vgs:
450mOhm @ 500mA, 4.5V
Supplier Device Package:
SC-88 (SC-70-6)
Packaging:
Tape & Reel (TR)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
300mW
Current - Continuous Drain (Id) @ 25°C:
500mA
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is FDG6313N. The FET features of the product include logic level gate. Base Part Number: fdg6313. It features mosfet array 2 n-channel (dual) 25v 500ma 300mw surface mount sc-88 (sc-70-6). The product's input capacitance at maximum includes 50pf @ 10v. The maximum gate charge and given voltages include 2.3nc @ 4.5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product has a 25v drain to source voltage. Moreover, the product comes in 6-tssop, sc-88, sot-363. It has a maximum Rds On and voltage of 450mohm @ 500ma, 4.5v. sc-88 (sc-70-6) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type 2 n-channel (dual). The maximum power of the product is 300mw. The continuous current drain at 25°C is 500ma. The on semiconductor's product offers user-desired applications.

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FDG6313N(Datasheets)
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Mold Compound 12/Dec/2007(PCN Design/Specification)
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Mold Compound 07/May/2008(PCN Design/Specification)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative ON Semiconductor FDG6313N and the best services all around the world ET14518912. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, ON Semiconductor FDG6313N, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as ON Semiconductor, commonly silicon.

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