ON Semiconductor FDD8424H
Product Information
Maximum Continuous Drain Current:
6.5 A, 9 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Common Drain
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
3V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
14 nC @ 10 V, 17 nC @ 10 V
Channel Type:
N, P
Length:
6.73mm
Pin Count:
5
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
3.1 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
2.39mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
24 mΩ, 54 mΩ
FET Feature:
Logic Level Gate
Base Part Number:
FDD842
Detailed Description:
Mosfet Array N and P-Channel 40V 9A, 6.5A 1.3W Surface Mount TO-252-4L
Input Capacitance (Ciss) (Max) @ Vds:
1000pF @ 20V
Gate Charge (Qg) (Max) @ Vgs:
20nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
3V @ 250µA
Series:
PowerTrench®
Package / Case:
TO-252-5, DPak (4 Leads + Tab), TO-252AD
Rds On (Max) @ Id, Vgs:
24mOhm @ 9A, 10V
Supplier Device Package:
TO-252-4L
Manufacturer Standard Lead Time:
36 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N and P-Channel
Customer Reference:
Power - Max:
1.3W
Drain to Source Voltage (Vdss):
40V
Current - Continuous Drain (Id) @ 25°C:
9A, 6.5A
Manufacturer:
ON Semiconductor
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Yes. We ship FDD8424H Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is FDD8424H. While 6.5 a, 9 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.22mm wide. The product offers common drain transistor configuration. It has a maximum of 40 v drain source voltage. The product carries 3v of maximum gate threshold voltage. The package is a sort of dpak (to-252). It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 14 nc @ 10 v, 17 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.73mm. It contains 5 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 3.1 w maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 2.39mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 24 mω, 54 mω maximum drain source resistance. The FET features of the product include logic level gate. Base Part Number: fdd842. It features mosfet array n and p-channel 40v 9a, 6.5a 1.3w surface mount to-252-4l. The product's input capacitance at maximum includes 1000pf @ 20v. The maximum gate charge and given voltages include 20nc @ 10v. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product powertrench®, is a highly preferred choice for users. Moreover, the product comes in to-252-5, dpak (4 leads + tab), to-252ad. It has a maximum Rds On and voltage of 24mohm @ 9a, 10v. to-252-4l is the supplier device package value. It has typical 36 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n and p-channel. The maximum power of the product is 1.3w. The product has a 40v drain to source voltage. The continuous current drain at 25°C is 9a, 6.5a. The on semiconductor's product offers user-desired applications.
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