ON Semiconductor FDD3510H

FDD3510H ON Semiconductor
ON Semiconductor

Product Information

FET Feature:
Logic Level Gate
Base Part Number:
FDD351
Detailed Description:
Mosfet Array N and P-Channel, Common Drain 80V 4.3A, 2.8A 1.3W Surface Mount TO-252-4L
Input Capacitance (Ciss) (Max) @ Vds:
800pF @ 40V
Gate Charge (Qg) (Max) @ Vgs:
18nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
4V @ 250µA
Series:
PowerTrench®
Package / Case:
TO-252-5, DPak (4 Leads + Tab), TO-252AD
Rds On (Max) @ Id, Vgs:
Supplier Device Package:
TO-252-4L
Manufacturer Standard Lead Time:
23 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N and P-Channel, Common Drain
Customer Reference:
Power - Max:
1.3W
Drain to Source Voltage (Vdss):
80V
Current - Continuous Drain (Id) @ 25°C:
4.3A, 2.8A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is FDD3510H. The FET features of the product include logic level gate. Base Part Number: fdd351. It features mosfet array n and p-channel, common drain 80v 4.3a, 2.8a 1.3w surface mount to-252-4l. The product's input capacitance at maximum includes 800pf @ 40v. The maximum gate charge and given voltages include 18nc @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product powertrench®, is a highly preferred choice for users. Moreover, the product comes in to-252-5, dpak (4 leads + tab), to-252ad. to-252-4l is the supplier device package value. It has typical 23 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n and p-channel, common drain. The maximum power of the product is 1.3w. The product has a 80v drain to source voltage. The continuous current drain at 25°C is 4.3a, 2.8a. The on semiconductor's product offers user-desired applications.

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Korea Fab Site Add 3/Jan/2017(PCN Assembly/Origin)
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FDD3510H(Datasheets)
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Description Chg 01/Apr/2016(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Devices 24/Oct/2017(PCN Packaging)
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Tape and Box/Reel Barcode Update 07/Aug/2014(PCN Packaging)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative ON Semiconductor FDD3510H and the best services all around the world ET14518697. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, ON Semiconductor FDD3510H, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as ON Semiconductor, commonly silicon.

Our ON Semiconductor FDD3510H is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at FDD3510H. We stock a large inventory containing a wide range of variety ET14518697, differentiates by its unique features ON Semiconductor. We also have discounts for potential customers and let it until most of them avail from ON Semiconductor FDD3510H. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET14518697 from leading ON Semiconductor, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157


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