ON Semiconductor FDC6333C
Product Information
Maximum Continuous Drain Current:
2 A, 2.5 A
Transistor Material:
Si
Width:
1.7mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
30 V
Package Type:
SOT-23
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
4.1 nC @ 10 V, 4.7 nC @ 10 V
Channel Type:
N, P
Length:
3mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
960 mW
Series:
PowerTrench
Maximum Gate Source Voltage:
-25 V, -16 V, +16 V, +25 V
Height:
1mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
150 mΩ, 220 mΩ
FET Feature:
Logic Level Gate
Base Part Number:
FDC6333
Detailed Description:
Mosfet Array N and P-Channel 30V 2.5A, 2A 700mW Surface Mount SuperSOT™-6
Input Capacitance (Ciss) (Max) @ Vds:
282pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:
6.6nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
3V @ 250µA
Series:
PowerTrench®
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Rds On (Max) @ Id, Vgs:
95mOhm @ 2.5A, 10V
Supplier Device Package:
SuperSOT™-6
Manufacturer Standard Lead Time:
10 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N and P-Channel
Customer Reference:
Power - Max:
700mW
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
2.5A, 2A
Manufacturer:
ON Semiconductor
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Yes. We ship FDC6333C Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is FDC6333C. While 2 a, 2.5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.7mm wide. The product offers isolated transistor configuration. It has a maximum of 30 v drain source voltage. The package is a sort of sot-23. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 4.1 nc @ 10 v, 4.7 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 3mm. It contains 6 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 960 mw maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of -25 v, -16 v, +16 v, +25 v. In addition, the height is 1mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 150 mω, 220 mω maximum drain source resistance. The FET features of the product include logic level gate. Base Part Number: fdc6333. It features mosfet array n and p-channel 30v 2.5a, 2a 700mw surface mount supersot™-6. The product's input capacitance at maximum includes 282pf @ 15v. The maximum gate charge and given voltages include 6.6nc @ 10v. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product powertrench®, is a highly preferred choice for users. Moreover, the product comes in sot-23-6 thin, tsot-23-6. It has a maximum Rds On and voltage of 95mohm @ 2.5a, 10v. supersot™-6 is the supplier device package value. It has typical 10 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n and p-channel. The maximum power of the product is 700mw. The product has a 30v drain to source voltage. The continuous current drain at 25°C is 2.5a, 2a. The on semiconductor's product offers user-desired applications.
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