Maximum Drain Source Voltage:
25 V
Typical Gate Charge @ Vgs:
1.1 nC @ 4.5 V, 1.64 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
900 mW
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
1mm
Width:
1.7mm
Length:
3mm
Minimum Gate Threshold Voltage:
0.65V
Package Type:
SOT-23
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
460 mA, 680 mA
Transistor Material:
Si
Maximum Drain Source Resistance:
1.1 Ω, 450 mΩ
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
FET Feature:
Logic Level Gate
Base Part Number:
FDC6321
Detailed Description:
Mosfet Array N and P-Channel 25V 680mA, 460mA 700mW Surface Mount SuperSOT™-6
Input Capacitance (Ciss) (Max) @ Vds:
50pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:
2.3nC @ 5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Drain to Source Voltage (Vdss):
25V
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Rds On (Max) @ Id, Vgs:
450mOhm @ 500mA, 4.5V
Supplier Device Package:
SuperSOT™-6
Manufacturer Standard Lead Time:
49 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N and P-Channel
Customer Reference:
Power - Max:
700mW
Current - Continuous Drain (Id) @ 25°C:
680mA, 460mA
Manufacturer:
ON Semiconductor
