Dimensions:
3 x 1.7 x 1mm
Maximum Continuous Drain Current:
2.5 A
Transistor Material:
Si
Width:
1.7mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
12 V
Package Type:
SOT-23
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
5.4 nC @ 4.5 V
Channel Type:
P
Typical Input Capacitance @ Vds:
455 pF @ -6 V
Length:
3mm
Pin Count:
6
Typical Turn-Off Delay Time:
21 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
960 mW
Series:
PowerTrench
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
1mm
Typical Turn-On Delay Time:
9 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
200 mΩ
FET Feature:
Logic Level Gate
Base Part Number:
FDC6318
Detailed Description:
Mosfet Array 2 P-Channel (Dual) 12V 2.5A 700mW Surface Mount SuperSOT™-6
Input Capacitance (Ciss) (Max) @ Vds:
455pF @ 6V
Gate Charge (Qg) (Max) @ Vgs:
8nC @ 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Series:
PowerTrench®
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Rds On (Max) @ Id, Vgs:
90mOhm @ 2.5A, 4.5V
Supplier Device Package:
SuperSOT™-6
Manufacturer Standard Lead Time:
48 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 P-Channel (Dual)
Customer Reference:
Power - Max:
700mW
Drain to Source Voltage (Vdss):
12V
Current - Continuous Drain (Id) @ 25°C:
2.5A
Manufacturer:
ON Semiconductor
