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This is manufactured by ON Semiconductor. The manufacturer part number is FDC3601N. The given dimensions of the product include 3 x 1.7 x 1mm. The product is available in surface mount configuration. Provides up to 960 mw maximum power dissipation. In addition, the height is 1mm. Furthermore, the product is 1.7mm wide. Its accurate length is 3mm. The package is a sort of tsot-23. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. It has a maximum operating temperature of +150 °c. It contains 6 pins. The FET features of the product include standard. Base Part Number: fdc3601. It features mosfet array 2 n-channel (dual) 100v 1a 700mw surface mount supersot™-6. The product's input capacitance at maximum includes 153pf @ 50v. The maximum gate charge and given voltages include 5nc @ 10v. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product powertrench®, is a highly preferred choice for users. Moreover, the product comes in sot-23-6 thin, tsot-23-6. It has a maximum Rds On and voltage of 500mohm @ 1a, 10v. supersot™-6 is the supplier device package value. It has typical 52 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type 2 n-channel (dual). The maximum power of the product is 700mw. The product has a 100v drain to source voltage. The continuous current drain at 25°C is 1a. The on semiconductor's product offers user-desired applications.
For more information please check the datasheets.
You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative ON Semiconductor FDC3601N and the best services all around the world ET14518593. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, ON Semiconductor FDC3601N, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as ON Semiconductor, commonly silicon.
Our ON Semiconductor FDC3601N is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at FDC3601N. We stock a large inventory containing a wide range of variety ET14518593, differentiates by its unique features ON Semiconductor. We also have discounts for potential customers and let it until most of them avail from ON Semiconductor FDC3601N. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET14518593 from leading ON Semiconductor, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157
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