ON Semiconductor FD6M045N06

ON Semiconductor

Product Information

FET Feature:
Standard
Base Part Number:
FD6M045
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 60V 60A Through Hole EPM15
Input Capacitance (Ciss) (Max) @ Vds:
3890pF @ 25V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
4V @ 250µA
Series:
Power-SPM™
Gate Charge (Qg) (Max) @ Vgs:
87nC @ 10V
Rds On (Max) @ Id, Vgs:
4.5mOhm @ 40A, 10V
Supplier Device Package:
EPM15
Packaging:
Tube
Operating Temperature:
-40°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Package / Case:
EPM15
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
60A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is FD6M045N06. The FET features of the product include standard. Base Part Number: fd6m045. It features mosfet array 2 n-channel (dual) 60v 60a through hole epm15. The product's input capacitance at maximum includes 3890pf @ 25v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product power-spm™, is a highly preferred choice for users. The maximum gate charge and given voltages include 87nc @ 10v. It has a maximum Rds On and voltage of 4.5mohm @ 40a, 10v. epm15 is the supplier device package value. In addition, tube is the available packaging type of the product. The product has -40°c ~ 150°c (tj) operating temperature range. It carries FET type 2 n-channel (dual). Moreover, the product comes in epm15. The product has a 60v drain to source voltage. The continuous current drain at 25°C is 60a. The on semiconductor's product offers user-desired applications.

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FD6M045N06(Datasheets)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative ON Semiconductor FD6M045N06 and the best services all around the world ET14518398. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, ON Semiconductor FD6M045N06, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as ON Semiconductor, commonly silicon.

Our ON Semiconductor FD6M045N06 is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at FD6M045N06. We stock a large inventory containing a wide range of variety ET14518398, differentiates by its unique features ON Semiconductor. We also have discounts for potential customers and let it until most of them avail from ON Semiconductor FD6M045N06. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET14518398 from leading ON Semiconductor, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157


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