Maximum Drain Source Voltage:
24 V
Typical Gate Charge @ Vgs:
16.8 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.4 W
Maximum Gate Source Voltage:
-12 V, +12 V
Maximum Gate Threshold Voltage:
1.3V
Height:
0.9mm
Width:
2.3mm
Length:
2.9mm
Maximum Drain Source Resistance:
17 mΩ
Package Type:
ECH
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
9 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Common Drain
FET Feature:
Logic Level Gate
Base Part Number:
ECH8655
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 24V 9A 1.5W Surface Mount 8-ECH
Gate Charge (Qg) (Max) @ Vgs:
16.8nC @ 10V
Mounting Type:
Surface Mount
Rds On (Max) @ Id, Vgs:
17mOhm @ 4.5A, 4.5V
Drain to Source Voltage (Vdss):
24V
Package / Case:
8-SMD, Flat Lead
Supplier Device Package:
8-ECH
Manufacturer Standard Lead Time:
49 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
1.5W
Current - Continuous Drain (Id) @ 25°C:
9A
Manufacturer:
ON Semiconductor
