ON Semiconductor ECH8619-TL-E

ON Semiconductor

Product Information

FET Feature:
Logic Level Gate
Base Part Number:
ECH8619
Detailed Description:
Mosfet Array N and P-Channel 60V 3A, 2A 1.5W Surface Mount 8-ECH
Input Capacitance (Ciss) (Max) @ Vds:
560pF @ 20V
Gate Charge (Qg) (Max) @ Vgs:
12.8nC @ 10V
Mounting Type:
Surface Mount
Rds On (Max) @ Id, Vgs:
93mOhm @ 1.5A, 10V
Drain to Source Voltage (Vdss):
60V
Package / Case:
8-SMD, Flat Lead
Supplier Device Package:
8-ECH
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
N and P-Channel
Customer Reference:
Power - Max:
1.5W
Current - Continuous Drain (Id) @ 25°C:
3A, 2A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is ECH8619-TL-E. The FET features of the product include logic level gate. Base Part Number: ech8619. It features mosfet array n and p-channel 60v 3a, 2a 1.5w surface mount 8-ech. The product's input capacitance at maximum includes 560pf @ 20v. The maximum gate charge and given voltages include 12.8nc @ 10v. The product is available in surface mount configuration. It has a maximum Rds On and voltage of 93mohm @ 1.5a, 10v. The product has a 60v drain to source voltage. Moreover, the product comes in 8-smd, flat lead. 8-ech is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n and p-channel. The maximum power of the product is 1.5w. The continuous current drain at 25°C is 3a, 2a. The on semiconductor's product offers user-desired applications.

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ECH8619(Datasheets)

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