Maximum Drain Source Voltage:
60 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
250 mW
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.6mm
Width:
1.2mm
Length:
1.7mm
Minimum Gate Threshold Voltage:
1V
Package Type:
SOT-563F
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
280 mA
Transistor Material:
Si
Maximum Drain Source Resistance:
13.5 Ω
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
FET Feature:
Logic Level Gate
Base Part Number:
2N7002
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 60V 280mA 250mW Surface Mount SOT-563F
Input Capacitance (Ciss) (Max) @ Vds:
50pF @ 25V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Drain to Source Voltage (Vdss):
60V
Package / Case:
SOT-563, SOT-666
Rds On (Max) @ Id, Vgs:
7.5Ohm @ 50mA, 5V
Supplier Device Package:
SOT-563F
Manufacturer Standard Lead Time:
17 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
250mW
Current - Continuous Drain (Id) @ 25°C:
280mA
Manufacturer:
ON Semiconductor
