This is manufactured by ON Semiconductor. The manufacturer part number is NVMFD5485NLWFT1G. The FET features of the product include logic level gate. Base Part Number: nvmfd5485. It features mosfet array 2 n-channel (dual) 60v 5.3a 2.9w surface mount 8-dfn (5x6) dual flag (so8fl-dual-asymmetrical). The product's input capacitance at maximum includes 560pf @ 25v. The maximum gate charge and given voltages include 20nc @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has a 60v drain to source voltage. Moreover, the product comes in 8-powertdfn. It has a maximum Rds On and voltage of 44mohm @ 15a, 10v. 8-dfn (5x6) dual flag (so8fl-dual-asymmetrical) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The product has -55°c ~ 175°c (tj) operating temperature range. It carries FET type 2 n-channel (dual). The maximum power of the product is 2.9w. The continuous current drain at 25°C is 5.3a. The on semiconductor's product offers user-desired applications.
NVMFD5485NL(WF)(Datasheets)
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This is manufactured by ON Semiconductor. The manufacturer part number is NVMFD5485NLWFT1G. The FET features of the product include logic level gate. Base Part Number: nvmfd5485. It features mosfet array 2 n-channel (dual) 60v 5.3a 2.9w surface mount 8-dfn (5x6) dual flag (so8fl-dual-asymmetrical). The product's input capacitance at maximum includes 560pf @ 25v. The maximum gate charge and given voltages include 20nc @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has a 60v drain to source voltage. Moreover, the product comes in 8-powertdfn. It has a maximum Rds On and voltage of 44mohm @ 15a, 10v. 8-dfn (5x6) dual flag (so8fl-dual-asymmetrical) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The product has -55°c ~ 175°c (tj) operating temperature range. It carries FET type 2 n-channel (dual). The maximum power of the product is 2.9w. The continuous current drain at 25°C is 5.3a. The on semiconductor's product offers user-desired applications.
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