Rohm Semiconductor EM6K31GT2R

EM6K31GT2R Rohm Semiconductor
Rohm Semiconductor

Product Information

FET Feature:
Logic Level Gate, 2.5V Drive
Base Part Number:
EM6K31
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 60V 250mA 120mW Surface Mount EMT6
Input Capacitance (Ciss) (Max) @ Vds:
15pF @ 25V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.3V @ 1mA
Drain to Source Voltage (Vdss):
60V
Package / Case:
SOT-563, SOT-666
Rds On (Max) @ Id, Vgs:
2.4Ohm @ 250mA, 10V
Supplier Device Package:
EMT6
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
120mW
Current - Continuous Drain (Id) @ 25°C:
250mA
Manufacturer:
Rohm Semiconductor
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This is manufactured by Rohm Semiconductor. The manufacturer part number is EM6K31GT2R. The FET features of the product include logic level gate, 2.5v drive. Base Part Number: em6k31. It features mosfet array 2 n-channel (dual) 60v 250ma 120mw surface mount emt6. The product's input capacitance at maximum includes 15pf @ 25v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.3v @ 1ma. The product has a 60v drain to source voltage. Moreover, the product comes in sot-563, sot-666. It has a maximum Rds On and voltage of 2.4ohm @ 250ma, 10v. emt6 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type 2 n-channel (dual). The maximum power of the product is 120mw. The continuous current drain at 25°C is 250ma. The rohm semiconductor's product offers user-desired applications.

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EM6K31(Datasheets)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Rohm Semiconductor EM6K31GT2R and the best services all around the world ET12270076. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Rohm Semiconductor EM6K31GT2R, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Rohm Semiconductor, commonly silicon.

Our Rohm Semiconductor EM6K31GT2R is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at EM6K31GT2R. We stock a large inventory containing a wide range of variety ET12270076, differentiates by its unique features Rohm Semiconductor. We also have discounts for potential customers and let it until most of them avail from Rohm Semiconductor EM6K31GT2R. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET12270076 from leading Rohm Semiconductor, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157


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