Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
2.6 nC @ 4.5 V, 3 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.1 W
Maximum Gate Source Voltage:
-12 V, +12 V
Maximum Gate Threshold Voltage:
1.2V
Height:
1.1mm
Width:
1.7mm
Length:
3.1mm
Maximum Drain Source Resistance:
115 mΩ, 240 mΩ
Package Type:
ChipFET
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
3 A, 3.9 A
Transistor Material:
Si
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Isolated
FET Feature:
Logic Level Gate
Base Part Number:
NTHC5513
Detailed Description:
Mosfet Array N and P-Channel 20V 2.9A, 2.2A 1.1W Surface Mount ChipFET™
Input Capacitance (Ciss) (Max) @ Vds:
180pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:
4nC @ 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.2V @ 250µA
Drain to Source Voltage (Vdss):
20V
Package / Case:
8-SMD, Flat Lead
Rds On (Max) @ Id, Vgs:
80mOhm @ 2.9A, 4.5V
Supplier Device Package:
ChipFET™
Manufacturer Standard Lead Time:
2 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N and P-Channel
Customer Reference:
Power - Max:
1.1W
Current - Continuous Drain (Id) @ 25°C:
2.9A, 2.2A
Manufacturer:
ON Semiconductor
