Diodes Incorporated DMN3190LDW-7
Product Information
FET Feature:
Logic Level Gate
Rds On (Max) @ Id, Vgs:
190mOhm @ 1.3A, 10V
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 30V 1A 320mW Surface Mount SOT-363
Input Capacitance (Ciss) (Max) @ Vds:
87pF @ 20V
Gate Charge (Qg) (Max) @ Vgs:
2nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.8V @ 250µA
Drain to Source Voltage (Vdss):
30V
Package / Case:
6-TSSOP, SC-88, SOT-363
Supplier Device Package:
SOT-363
Manufacturer Standard Lead Time:
20 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
320mW
Current - Continuous Drain (Id) @ 25°C:
1A
Manufacturer:
Diodes Incorporated
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Yes. We ship DMN3190LDW-7 Internationally to many countries around the world.
This is manufactured by Diodes Incorporated. The manufacturer part number is DMN3190LDW-7. The FET features of the product include logic level gate. It has a maximum Rds On and voltage of 190mohm @ 1.3a, 10v. It features mosfet array 2 n-channel (dual) 30v 1a 320mw surface mount sot-363. The product's input capacitance at maximum includes 87pf @ 20v. The maximum gate charge and given voltages include 2nc @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.8v @ 250µa. The product has a 30v drain to source voltage. Moreover, the product comes in 6-tssop, sc-88, sot-363. sot-363 is the supplier device package value. It has typical 20 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type 2 n-channel (dual). The maximum power of the product is 320mw. The continuous current drain at 25°C is 1a. The diodes incorporated's product offers user-desired applications.
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