Infineon Technologies BSO615N G

BSO615N-G Infineon Technologies BSO615N G
Infineon Technologies

Product Information

FET Feature:
Logic Level Gate
Vgs(th) (Max) @ Id:
2V @ 20µA
Input Capacitance (Ciss) (Max) @ Vds:
380pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:
20nC @ 10V
Mounting Type:
Surface Mount
Standard Package:
1
Series:
SIPMOS®
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
150 mOhm @ 2.6A, 4.5V
Supplier Device Package:
PG-DSO-8
Manufacturer Standard Lead Time:
12 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Dual)
Moisture Sensitivity Level (MSL):
3 (168 Hours)
Power - Max:
2W
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
2.6A
Manufacturer:
Infineon Technologies
RoHs Compliant
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This is manufactured by Infineon Technologies. The manufacturer part number is BSO615N G. The FET features of the product include logic level gate. The typical Vgs (th) (max) of the product is 2v @ 20µa. The product's input capacitance at maximum includes 380pf @ 25v. The maximum gate charge and given voltages include 20nc @ 10v. The product is available in surface mount configuration. It is available in the standard package of 1. The product sipmos®, is a highly preferred choice for users. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 150 mohm @ 2.6a, 4.5v. pg-dso-8 is the supplier device package value. It has typical 12 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type 2 n-channel (dual). Its typical moisture sensitivity level is 3 (168 hours). The maximum power of the product is 2w. The product has a 60v drain to source voltage. The continuous current drain at 25°C is 2.6a. The infineon technologies's product offers user-desired applications.

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BSO 615NG(Datasheets)
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Part Number Guide(Other Related Documents)
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1359 (UK2011-EN PDF)(Catalog Page)
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Dry Packing Box Update 24/Sep/2014(PCN Packaging)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Infineon Technologies BSO615N G and the best services all around the world ET12000862. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Infineon Technologies BSO615N G, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Infineon Technologies, commonly silicon.

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