Microsemi Corporation APTMC120AM16CD3AG
Product Information
FET Feature:
Silicon Carbide (SiC)
Rds On (Max) @ Id, Vgs:
20mOhm @ 100A, 20V
Detailed Description:
Mosfet Array 2 N-Channel (Half Bridge) 1200V (1.2kV) 131A (Tc) 625W Chassis Mount D3
Input Capacitance (Ciss) (Max) @ Vds:
4750pF @ 1000V
Gate Charge (Qg) (Max) @ Vgs:
246nC @ 20V
Mounting Type:
Chassis Mount
Vgs(th) (Max) @ Id:
2.2V @ 5mA (Typ)
Drain to Source Voltage (Vdss):
1200V (1.2kV)
Package / Case:
D-3 Module
Supplier Device Package:
D3
Packaging:
Bulk
Operating Temperature:
-40°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Half Bridge)
Power - Max:
625W
Current - Continuous Drain (Id) @ 25°C:
131A (Tc)
Manufacturer:
Microsemi Corporation
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FAQs
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Yes. We ship APTMC120AM16CD3AG Internationally to many countries around the world.
This is manufactured by Microsemi Corporation. The manufacturer part number is APTMC120AM16CD3AG. The FET features of the product include silicon carbide (sic). It has a maximum Rds On and voltage of 20mohm @ 100a, 20v. It features mosfet array 2 n-channel (half bridge) 1200v (1.2kv) 131a (tc) 625w chassis mount d3. The product's input capacitance at maximum includes 4750pf @ 1000v. The maximum gate charge and given voltages include 246nc @ 20v. The product is available in chassis mount configuration. The typical Vgs (th) (max) of the product is 2.2v @ 5ma (typ). The product has a 1200v (1.2kv) drain to source voltage. Moreover, the product comes in d-3 module. d3 is the supplier device package value. In addition, bulk is the available packaging type of the product. The product has -40°c ~ 150°c (tj) operating temperature range. It carries FET type 2 n-channel (half bridge). The maximum power of the product is 625w. The continuous current drain at 25°C is 131a (tc). The microsemi corporation's product offers user-desired applications.
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