Nexperia USA Inc. PMCXB900UE

PMCXB900UE Nexperia USA Inc.
Nexperia USA Inc.

Product Information

FET Feature:
Logic Level Gate
Manufacturer Standard Lead Time:
26 Weeks
Detailed Description:
Mosfet Array N and P-Channel Complementary 20V 600mA, 500mA 265mW Surface Mount 6-DFN (1.1x1)
Vgs(th) (Max) @ Id:
950mV @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-XFDFN Exposed Pad
Current - Continuous Drain (Id) @ 25°C:
600mA, 500mA
Gate Charge (Qg) (Max) @ Vgs:
0.7nC @ 4.5V
Rds On (Max) @ Id, Vgs:
620 mOhm @ 600mA, 4.5V
FET Type:
N and P-Channel Complementary
Standard Package:
1
Manufacturer:
Nexperia USA Inc.
Drain to Source Voltage (Vdss):
20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
21.3pF @ 10V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
6-DFN (1.1x1)
Packaging:
Cut Tape (CT)
Power - Max:
265mW
Other Names:
1727-1469-1 568-10940-1 568-10940-1-ND
RoHs Compliant
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This is manufactured by Nexperia USA Inc.. The manufacturer part number is PMCXB900UE. The FET features of the product include logic level gate. It has typical 26 weeks of manufacturer standard lead time. It features mosfet array n and p-channel complementary 20v 600ma, 500ma 265mw surface mount 6-dfn (1.1x1). The typical Vgs (th) (max) of the product is 950mv @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-xfdfn exposed pad. The continuous current drain at 25°C is 600ma, 500ma. The maximum gate charge and given voltages include 0.7nc @ 4.5v. It has a maximum Rds On and voltage of 620 mohm @ 600ma, 4.5v. It carries FET type n and p-channel complementary. It is available in the standard package of 1. The nexperia usa inc.'s product offers user-desired applications. The product has a 20v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 21.3pf @ 10v. The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. 6-dfn (1.1x1) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The maximum power of the product is 265mw. Alternative Names include 1727-1469-1 568-10940-1 568-10940-1-nd.

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PMCXB900UE(Datasheets)
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Label Chg 12/Mar/2017(PCN Packaging)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Nexperia USA Inc. PMCXB900UE and the best services all around the world ET11977306. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Nexperia USA Inc. PMCXB900UE, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Nexperia USA Inc., commonly silicon.

Our Nexperia USA Inc. PMCXB900UE is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at PMCXB900UE. We stock a large inventory containing a wide range of variety ET11977306, differentiates by its unique features Nexperia USA Inc.. We also have discounts for potential customers and let it until most of them avail from Nexperia USA Inc. PMCXB900UE. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET11977306 from leading Nexperia USA Inc., feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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