Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
2.2 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
350 mW
Maximum Gate Source Voltage:
-12 V, +12 V
Maximum Gate Threshold Voltage:
1.2V
Height:
1mm
Width:
1.35mm
Length:
2.2mm
Maximum Drain Source Resistance:
1 Ω
Package Type:
SOT-363 (SC-88)
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
880 mA
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
FET Feature:
Logic Level Gate
Base Part Number:
NTJD4152
Detailed Description:
Mosfet Array 2 P-Channel (Dual) 20V 880mA 272mW Surface Mount SC-88/SC70-6/SOT-363
Input Capacitance (Ciss) (Max) @ Vds:
155pF @ 20V
Gate Charge (Qg) (Max) @ Vgs:
2.2nC @ 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.2V @ 250µA
Drain to Source Voltage (Vdss):
20V
Package / Case:
6-TSSOP, SC-88, SOT-363
Rds On (Max) @ Id, Vgs:
260mOhm @ 880mA, 4.5V
Supplier Device Package:
SC-88/SC70-6/SOT-363
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 P-Channel (Dual)
Customer Reference:
Power - Max:
272mW
Current - Continuous Drain (Id) @ 25°C:
880mA
Manufacturer:
ON Semiconductor
