Category:
Power MOSFET
Dimensions:
2 x 1.7 x 0.75mm
Maximum Continuous Drain Current:
5 A
Transistor Material:
Si
Width:
1.7mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
12 V
Maximum Gate Threshold Voltage:
1.3V
Package Type:
EMH
Number of Elements per Chip:
2
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
12 nC @ 4.5 V
Channel Type:
P
Typical Input Capacitance @ Vds:
1300 pF @ -6 V
Length:
2mm
Pin Count:
8
Typical Turn-Off Delay Time:
79 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1 W
Maximum Gate Source Voltage:
-10 V, +10 V
Height:
0.75mm
Typical Turn-On Delay Time:
16 ns
Maximum Drain Source Resistance:
200 mΩ
FET Feature:
Logic Level Gate
Base Part Number:
EMH2314
Detailed Description:
Mosfet Array 2 P-Channel (Dual) 12V 5A 1.2W Surface Mount 8-EMH
Input Capacitance (Ciss) (Max) @ Vds:
1300pF @ 6V
Gate Charge (Qg) (Max) @ Vgs:
12nC @ 4.5V
Mounting Type:
Surface Mount
Rds On (Max) @ Id, Vgs:
37mOhm @ 2.5A, 4.5V
Drain to Source Voltage (Vdss):
12V
Package / Case:
8-SMD, Flat Lead
Supplier Device Package:
8-EMH
Packaging:
Tape & Reel (TR)
Operating Temperature:
150°C (TJ)
FET Type:
2 P-Channel (Dual)
Customer Reference:
Power - Max:
1.2W
Current - Continuous Drain (Id) @ 25°C:
5A
Manufacturer:
ON Semiconductor
This is manufactured by ON Semiconductor. The manufacturer part number is EMH2314-TL-H. It is of power mosfet category . The given dimensions of the product include 2 x 1.7 x 0.75mm. While 5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.7mm wide. The product offers isolated transistor configuration. It has a maximum of 12 v drain source voltage. The product carries 1.3v of maximum gate threshold voltage. The package is a sort of emh. It consists of 2 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 12 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 1300 pf @ -6 v . Its accurate length is 2mm. It contains 8 pins. Whereas, its typical turn-off delay time is about 79 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1 w maximum power dissipation. It features a maximum gate source voltage of -10 v, +10 v. In addition, the height is 0.75mm. In addition, it has a typical 16 ns turn-on delay time . It provides up to 200 mω maximum drain source resistance. The FET features of the product include logic level gate. Base Part Number: emh2314. It features mosfet array 2 p-channel (dual) 12v 5a 1.2w surface mount 8-emh. The product's input capacitance at maximum includes 1300pf @ 6v. The maximum gate charge and given voltages include 12nc @ 4.5v. It has a maximum Rds On and voltage of 37mohm @ 2.5a, 4.5v. The product has a 12v drain to source voltage. Moreover, the product comes in 8-smd, flat lead. 8-emh is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type 2 p-channel (dual). The maximum power of the product is 1.2w. The continuous current drain at 25°C is 5a. The on semiconductor's product offers user-desired applications.
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