SANYO Semiconductor (U.S.A) Corporation FW231A-TL-E
Product Information
FET Feature:
Logic Level Gate
Rds On (Max) @ Id, Vgs:
23mOhm @ 8A, 4.5V
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 20V 8A 2.3W Surface Mount 8-SOP
Input Capacitance (Ciss) (Max) @ Vds:
1530pF @ 10V
Mounting Type:
Surface Mount
Gate Charge (Qg) (Max) @ Vgs:
21nC @ 4.5V
Drain to Source Voltage (Vdss):
20V
Package / Case:
8-SOIC (0.173", 4.40mm Width)
Supplier Device Package:
8-SOP
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
2.3W
Current - Continuous Drain (Id) @ 25°C:
8A
Manufacturer:
SANYO Semiconductor (U.S.A) Corporation
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Yes. We ship FW231A-TL-E Internationally to many countries around the world.
This is manufactured by SANYO Semiconductor (U.S.A) Corporation. The manufacturer part number is FW231A-TL-E. The FET features of the product include logic level gate. It has a maximum Rds On and voltage of 23mohm @ 8a, 4.5v. It features mosfet array 2 n-channel (dual) 20v 8a 2.3w surface mount 8-sop. The product's input capacitance at maximum includes 1530pf @ 10v. The product is available in surface mount configuration. The maximum gate charge and given voltages include 21nc @ 4.5v. The product has a 20v drain to source voltage. Moreover, the product comes in 8-soic (0.173", 4.40mm width). 8-sop is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type 2 n-channel (dual). The maximum power of the product is 2.3w. The continuous current drain at 25°C is 8a. The sanyo semiconductor (u.s.a) corporation's product offers user-desired applications.
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