Rohm Semiconductor HP8KA1TB

HP8KA1TB Rohm Semiconductor
Rohm Semiconductor

Product Information

FET Feature:
Logic Level Gate
Base Part Number:
HP8KA1
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 30V 14A 3W Surface Mount 8-HSOP
Input Capacitance (Ciss) (Max) @ Vds:
2550pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:
24nC @ 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 10mA
Drain to Source Voltage (Vdss):
30V
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
5mOhm @ 14A, 10V
Supplier Device Package:
8-HSOP
Manufacturer Standard Lead Time:
16 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
3W
Current - Continuous Drain (Id) @ 25°C:
14A
Manufacturer:
Rohm Semiconductor
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This is manufactured by Rohm Semiconductor. The manufacturer part number is HP8KA1TB. The FET features of the product include logic level gate. Base Part Number: hp8ka1. It features mosfet array 2 n-channel (dual) 30v 14a 3w surface mount 8-hsop. The product's input capacitance at maximum includes 2550pf @ 15v. The maximum gate charge and given voltages include 24nc @ 4.5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 10ma. The product has a 30v drain to source voltage. Moreover, the product comes in 8-powertdfn. It has a maximum Rds On and voltage of 5mohm @ 14a, 10v. 8-hsop is the supplier device package value. It has typical 16 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type 2 n-channel (dual). The maximum power of the product is 3w. The continuous current drain at 25°C is 14a. The rohm semiconductor's product offers user-desired applications.

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Rohm Semiconductor HP8KA1TB and the best services all around the world ET11778587. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Rohm Semiconductor HP8KA1TB, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Rohm Semiconductor, commonly silicon.

Our Rohm Semiconductor HP8KA1TB is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at HP8KA1TB. We stock a large inventory containing a wide range of variety ET11778587, differentiates by its unique features Rohm Semiconductor. We also have discounts for potential customers and let it until most of them avail from Rohm Semiconductor HP8KA1TB. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET11778587 from leading Rohm Semiconductor, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157


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