Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
4.7 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.2 W
Maximum Gate Source Voltage:
-10 V, +10 V
Maximum Gate Threshold Voltage:
1.3V
Height:
0.75mm
Width:
1.7mm
Length:
2mm
Maximum Drain Source Resistance:
115 mΩ
Package Type:
EMH
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
3 A, 4 A
Transistor Material:
Si
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Isolated
FET Feature:
Logic Level Gate
Base Part Number:
EMH2604
Detailed Description:
Mosfet Array N and P-Channel 20V 4A, 3A 1.2W Surface Mount 8-EMH
Input Capacitance (Ciss) (Max) @ Vds:
345pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:
4.7nC @ 4.5V
Mounting Type:
Surface Mount
Rds On (Max) @ Id, Vgs:
45mOhm @ 4A, 4.5V
Drain to Source Voltage (Vdss):
20V
Package / Case:
8-SMD, Flat Lead
Supplier Device Package:
8-EMH
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
N and P-Channel
Customer Reference:
Power - Max:
1.2W
Current - Continuous Drain (Id) @ 25°C:
4A, 3A
Manufacturer:
ON Semiconductor
