Toshiba Semiconductor and Storage SSM6N55NU,LF(T

SSM6N55NU-LF-T Toshiba Semiconductor and Storage SSM6N55NU,LF(T
Toshiba Semiconductor and Storage

Product Information

FET Feature:
Logic Level Gate
Rds On (Max) @ Id, Vgs:
46 mOhm @ 4A, 10V
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 30V 4A 1W Surface Mount 6-µDFN(2x2)
Input Capacitance (Ciss) (Max) @ Vds:
280pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:
2.5nC @ 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 100µA
Standard Package:
1
Package / Case:
6-WDFN Exposed Pad
Supplier Device Package:
6-µDFN(2x2)
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
2 N-Channel (Dual)
Power - Max:
1W
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
4A
Other Names:
SSM6N55NULF(TCT SSM6N55NULFCT SSM6N55NULFCT-ND
Manufacturer:
Toshiba Semiconductor and Storage
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM6N55NU,LF(T. The FET features of the product include logic level gate. It has a maximum Rds On and voltage of 46 mohm @ 4a, 10v. It features mosfet array 2 n-channel (dual) 30v 4a 1w surface mount 6-µdfn(2x2). The product's input capacitance at maximum includes 280pf @ 15v. The maximum gate charge and given voltages include 2.5nc @ 4.5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 100µa. It is available in the standard package of 1. Moreover, the product comes in 6-wdfn exposed pad. 6-µdfn(2x2) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type 2 n-channel (dual). The maximum power of the product is 1w. The product has a 30v drain to source voltage. The continuous current drain at 25°C is 4a. Alternative Names include ssm6n55nulf(tct ssm6n55nulfct ssm6n55nulfct-nd. The toshiba semiconductor and storage's product offers user-desired applications.

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