Category:
Power MOSFET
Dimensions:
2.9 x 2.3 x 0.9mm
Maximum Continuous Drain Current:
4.5 A
Transistor Material:
Si
Width:
2.3mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.6V
Package Type:
ECH
Number of Elements per Chip:
2
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
4.4 nC @10 V, 10 nC @ 10 V
Channel Type:
N, P
Typical Input Capacitance @ Vds:
240 pF@ 10 V, 430 pF@ -10 V
Length:
2.9mm
Pin Count:
8
Typical Turn-Off Delay Time:
17 ns, 45 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.3 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.9mm
Typical Turn-On Delay Time:
6.2 ns, 7.5 ns
Maximum Drain Source Resistance:
59 mΩ
FET Feature:
Logic Level Gate
Base Part Number:
ECH8660
Detailed Description:
Mosfet Array N and P-Channel 30V 4.5A 1.5W Surface Mount 8-ECH
Input Capacitance (Ciss) (Max) @ Vds:
240pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:
4.4nC @ 10V
Mounting Type:
Surface Mount
Rds On (Max) @ Id, Vgs:
59mOhm @ 2A, 10V
Drain to Source Voltage (Vdss):
30V
Package / Case:
8-SMD, Flat Lead
Supplier Device Package:
8-ECH
Manufacturer Standard Lead Time:
52 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
N and P-Channel
Customer Reference:
Power - Max:
1.5W
Current - Continuous Drain (Id) @ 25°C:
4.5A
Manufacturer:
ON Semiconductor
