ON Semiconductor NTMFD4C85NT1G

ON Semiconductor

Product Information

FET Feature:
Standard
Base Part Number:
NTMFD4
Detailed Description:
Mosfet Array 2 N-Channel (Dual) Asymmetrical 30V 15.4A, 29.7A 1.13W Surface Mount 8-DFN (5x6)
Input Capacitance (Ciss) (Max) @ Vds:
1960pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:
32nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.1V @ 250µA
Drain to Source Voltage (Vdss):
30V
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
3mOhm @ 20A, 10V
Supplier Device Package:
8-DFN (5x6)
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Dual) Asymmetrical
Customer Reference:
Power - Max:
1.13W
Current - Continuous Drain (Id) @ 25°C:
15.4A, 29.7A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NTMFD4C85NT1G. The FET features of the product include standard. Base Part Number: ntmfd4. It features mosfet array 2 n-channel (dual) asymmetrical 30v 15.4a, 29.7a 1.13w surface mount 8-dfn (5x6). The product's input capacitance at maximum includes 1960pf @ 15v. The maximum gate charge and given voltages include 32nc @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.1v @ 250µa. The product has a 30v drain to source voltage. Moreover, the product comes in 8-powertdfn. It has a maximum Rds On and voltage of 3mohm @ 20a, 10v. 8-dfn (5x6) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type 2 n-channel (dual) asymmetrical. The maximum power of the product is 1.13w. The continuous current drain at 25°C is 15.4a, 29.7a. The on semiconductor's product offers user-desired applications.

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3Q Mult Dev EOL 9/Nov/2017(PCN Obsolescence/ EOL)
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NTMF/NTTF 27/Jan/2017(PCN Assembly/Origin)
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NTMFD4C85N(Datasheets)

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