Maximum Continuous Drain Current:
8 A
Transistor Material:
Si
Width:
4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
3V
Maximum Drain Source Resistance:
27 mΩ
Package Type:
SOIC
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
7.7 nC @ 4.5 V
Channel Type:
N
Length:
5mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.5mm
Minimum Operating Temperature:
-55 °C
FET Feature:
Logic Level Gate
Base Part Number:
NTMD4820
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 30V 4.9A 750mW Surface Mount 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds:
940pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:
7.7nC @ 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
3V @ 250µA
Drain to Source Voltage (Vdss):
30V
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
20mOhm @ 7.5A, 10V
Supplier Device Package:
8-SOIC
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
750mW
Current - Continuous Drain (Id) @ 25°C:
4.9A
Manufacturer:
ON Semiconductor
