This is manufactured by ON Semiconductor. The manufacturer part number is NTMD3P03R2G. The FET features of the product include logic level gate. Base Part Number: ntmd3. It features mosfet array 2 p-channel (dual) 30v 2.34a 730mw surface mount 8-soic. The product's input capacitance at maximum includes 750pf @ 24v. The maximum gate charge and given voltages include 25nc @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has a 30v drain to source voltage. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 85mohm @ 3.05a, 10v. 8-soic is the supplier device package value. It has typical 52 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type 2 p-channel (dual). The maximum power of the product is 730mw. The continuous current drain at 25°C is 2.34a. The on semiconductor's product offers user-desired applications.
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Yes. We ship NTMD3P03R2G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is NTMD3P03R2G. The FET features of the product include logic level gate. Base Part Number: ntmd3. It features mosfet array 2 p-channel (dual) 30v 2.34a 730mw surface mount 8-soic. The product's input capacitance at maximum includes 750pf @ 24v. The maximum gate charge and given voltages include 25nc @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has a 30v drain to source voltage. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 85mohm @ 3.05a, 10v. 8-soic is the supplier device package value. It has typical 52 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type 2 p-channel (dual). The maximum power of the product is 730mw. The continuous current drain at 25°C is 2.34a. The on semiconductor's product offers user-desired applications.
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