Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
1.58 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
800 mW
Maximum Gate Source Voltage:
-10 V, +10 V
Maximum Gate Threshold Voltage:
1.3V
Height:
0.85mm
Width:
1.6mm
Length:
2mm
Maximum Drain Source Resistance:
12.8 Ω
Package Type:
MCPH
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
350 mA
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
FET Feature:
Logic Level Gate
Base Part Number:
MCH66
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 30V 350mA 800mW Surface Mount 6-MCPH
Input Capacitance (Ciss) (Max) @ Vds:
7pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:
1.58nC @ 10V
Mounting Type:
Surface Mount
Rds On (Max) @ Id, Vgs:
3.7Ohm @ 80mA, 4V
Drain to Source Voltage (Vdss):
30V
Package / Case:
6-SMD, Flat Leads
Supplier Device Package:
6-MCPH
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
800mW
Current - Continuous Drain (Id) @ 25°C:
350mA
Manufacturer:
ON Semiconductor
