Rohm Semiconductor HP8K22TB

HP8K22TB Rohm Semiconductor
Rohm Semiconductor

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
4.6mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs:
16.8nC @ 10V
Vgs(th) (Max) @ Id:
2.5V @ 1mA
REACH Status:
REACH Unaffected
edacadModel:
HP8K22TB Models
Current - Continuous Drain (Id) @ 25°C:
27A, 57A
edacadModelUrl:
/en/models/6573215
Configuration:
2 N-Channel (Half Bridge)
Manufacturer:
Rohm Semiconductor
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
21 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
1080pF @ 15V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-HSOP
Packaging:
Tape & Reel (TR)
Power - Max:
25W
Technology:
-
Base Product Number:
HP8K22
ECCN:
EAR99
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This is manufactured by Rohm Semiconductor. The manufacturer part number is HP8K22TB. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powertdfn. It has a maximum Rds On and voltage of 4.6mohm @ 20a, 10v. The maximum gate charge and given voltages include 16.8nc @ 10v. The typical Vgs (th) (max) of the product is 2.5v @ 1ma. In addition, it is reach unaffected. The continuous current drain at 25°C is 27a, 57a. The product is available in 2 n-channel (half bridge) configuration. The rohm semiconductor's product offers user-desired applications. The product has a 30v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). It has a long 21 weeks standard lead time. The product's input capacitance at maximum includes 1080pf @ 15v. The product is available in surface mount configuration. 8-hsop is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 25w. Moreover, it corresponds to hp8k22, a base product number of the product. The product is designated with the ear99 code number.

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HSMT8 TB Taping Spec(Datasheets)
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Transistor, MOSFET Flammability(Other Related Documents)
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HSOP8 Part Marking(Other Related Documents)
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Transistor, MOSFET Level 1 MSL(Environmental Information)
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HP8K22 ESD Data(Environmental Information)
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Transistor Whisker Info(Environmental Information)
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HSOP-AuCuAl-HF Constitution Material List(Environmental Information)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Rohm Semiconductor HP8K22TB and the best services all around the world ET11412120. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Rohm Semiconductor HP8K22TB, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Rohm Semiconductor, commonly silicon.

Our Rohm Semiconductor HP8K22TB is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at HP8K22TB. We stock a large inventory containing a wide range of variety ET11412120, differentiates by its unique features Rohm Semiconductor. We also have discounts for potential customers and let it until most of them avail from Rohm Semiconductor HP8K22TB. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET11412120 from leading Rohm Semiconductor, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157


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