Microsemi Corporation APTMC120AM08CD3AG
Product Information
FET Feature:
Silicon Carbide (SiC)
Rds On (Max) @ Id, Vgs:
10mOhm @ 200A, 20V
Detailed Description:
Mosfet Array 2 N-Channel (Half Bridge) 1200V (1.2kV) 250A (Tc) 1100W Chassis Mount D3
Input Capacitance (Ciss) (Max) @ Vds:
9500pF @ 1000V
Gate Charge (Qg) (Max) @ Vgs:
490nC @ 20V
Mounting Type:
Chassis Mount
Vgs(th) (Max) @ Id:
2.2V @ 10mA (Typ)
Drain to Source Voltage (Vdss):
1200V (1.2kV)
Package / Case:
D-3 Module
Supplier Device Package:
D3
Packaging:
Bulk
Operating Temperature:
-40°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Half Bridge)
Power - Max:
1100W
Current - Continuous Drain (Id) @ 25°C:
250A (Tc)
Manufacturer:
Microsemi Corporation
Checking for live stock
FAQs
Yes. You can also search APTMC120AM08CD3AG on website for other similar products.
We accept all major payment methods for all products including ET11350074. Please check your shopping cart at the time of order.
You can order Microsemi Corporation brand products with APTMC120AM08CD3AG directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - FETs, MOSFETs - Arrays category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Microsemi Corporation APTMC120AM08CD3AG. You can also check on our website or by contacting our customer support team for further order details on Microsemi Corporation APTMC120AM08CD3AG.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11350074 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Microsemi Corporation" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11350074.
Yes. We ship APTMC120AM08CD3AG Internationally to many countries around the world.
This is manufactured by Microsemi Corporation. The manufacturer part number is APTMC120AM08CD3AG. The FET features of the product include silicon carbide (sic). It has a maximum Rds On and voltage of 10mohm @ 200a, 20v. It features mosfet array 2 n-channel (half bridge) 1200v (1.2kv) 250a (tc) 1100w chassis mount d3. The product's input capacitance at maximum includes 9500pf @ 1000v. The maximum gate charge and given voltages include 490nc @ 20v. The product is available in chassis mount configuration. The typical Vgs (th) (max) of the product is 2.2v @ 10ma (typ). The product has a 1200v (1.2kv) drain to source voltage. Moreover, the product comes in d-3 module. d3 is the supplier device package value. In addition, bulk is the available packaging type of the product. The product has -40°c ~ 150°c (tj) operating temperature range. It carries FET type 2 n-channel (half bridge). The maximum power of the product is 1100w. The continuous current drain at 25°C is 250a (tc). The microsemi corporation's product offers user-desired applications.
Reviews
Don’t hesitate to ask questions for better clarification.