Category:
Power MOSFET
Dimensions:
2 x 2 x 0.75mm
Maximum Continuous Drain Current:
4.1 A
Transistor Material:
Si
Width:
2mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
1V
Package Type:
WDFN
Number of Elements per Chip:
2
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
5.5 nC @ 4.5 V
Channel Type:
P
Typical Input Capacitance @ Vds:
531 pF @ -10 V
Length:
2mm
Pin Count:
6
Typical Turn-Off Delay Time:
19 ns, 21 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.3 W
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
0.75mm
Typical Turn-On Delay Time:
6 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
200 mΩ
FET Feature:
Logic Level Gate
Base Part Number:
NTLJD3115
Detailed Description:
Mosfet Array 2 P-Channel (Dual) 20V 2.3A 710mW Surface Mount 6-WDFN (2x2)
Input Capacitance (Ciss) (Max) @ Vds:
531pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:
6.2nC @ 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1V @ 250µA
Drain to Source Voltage (Vdss):
20V
Package / Case:
6-WDFN Exposed Pad
Rds On (Max) @ Id, Vgs:
100mOhm @ 2A, 4.5V
Supplier Device Package:
6-WDFN (2x2)
Manufacturer Standard Lead Time:
52 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 P-Channel (Dual)
Customer Reference:
Power - Max:
710mW
Current - Continuous Drain (Id) @ 25°C:
2.3A
Manufacturer:
ON Semiconductor
