Category:
Power MOSFET
Dimensions:
2.9 x 2.3 x 0.9mm
Maximum Continuous Drain Current:
6 A
Transistor Material:
Si
Width:
2.3mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
12 V
Maximum Gate Threshold Voltage:
1.4V
Maximum Drain Source Resistance:
78 mΩ
Package Type:
ECH
Number of Elements per Chip:
2
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
11 nC @ 4.5 V
Channel Type:
P
Typical Input Capacitance @ Vds:
1000 pF @ -6 V
Length:
2.9mm
Pin Count:
8
Typical Turn-Off Delay Time:
105 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.3 W
Maximum Gate Source Voltage:
-10 V, +10 V
Height:
0.9mm
Typical Turn-On Delay Time:
11 ns
FET Feature:
Logic Level Gate
Base Part Number:
ECH8652
Detailed Description:
Mosfet Array 2 P-Channel (Dual) 12V 6A 1.5W Surface Mount 8-ECH
Input Capacitance (Ciss) (Max) @ Vds:
1000pF @ 6V
Gate Charge (Qg) (Max) @ Vgs:
11nC @ 4.5V
Mounting Type:
Surface Mount
Rds On (Max) @ Id, Vgs:
28mOhm @ 3A, 4.5V
Drain to Source Voltage (Vdss):
12V
Package / Case:
8-SMD, Flat Lead
Supplier Device Package:
8-ECH
Packaging:
Tape & Reel (TR)
Operating Temperature:
150°C (TJ)
FET Type:
2 P-Channel (Dual)
Customer Reference:
Power - Max:
1.5W
Current - Continuous Drain (Id) @ 25°C:
6A
Manufacturer:
ON Semiconductor
