Vishay Siliconix SI3585CDV-T1-GE3

SI3585CDV-T1-GE3 Vishay Siliconix
Vishay Siliconix

Product Information

FET Feature:
Logic Level Gate
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Rds On (Max) @ Id, Vgs:
58mOhm @ 2.5A, 4.5V
title:
SI3585CDV-T1-GE3
Vgs(th) (Max) @ Id:
1.5V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
SI3585CDV-T1-GE3 Models
Current - Continuous Drain (Id) @ 25°C:
3.9A, 2.1A
edacadModelUrl:
/en/models/4496226
Configuration:
N and P-Channel
Manufacturer:
Vishay Siliconix
Drain to Source Voltage (Vdss):
20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
8 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
150pF @ 10V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Gate Charge (Qg) (Max) @ Vgs:
4.8nC @ 10V
Supplier Device Package:
6-TSOP
Packaging:
Tape & Reel (TR)
Power - Max:
1.4W, 1.3W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI3585
ECCN:
EAR99
Checking for live stock

This is manufactured by Vishay Siliconix. The manufacturer part number is SI3585CDV-T1-GE3. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sot-23-6 thin, tsot-23-6. It has a maximum Rds On and voltage of 58mohm @ 2.5a, 4.5v. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. In addition, it is reach unaffected. The continuous current drain at 25°C is 3.9a, 2.1a. The product is available in n and p-channel configuration. The vishay siliconix's product offers user-desired applications. The product has a 20v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). It has a long 8 weeks standard lead time. The product's input capacitance at maximum includes 150pf @ 10v. The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. The maximum gate charge and given voltages include 4.8nc @ 10v. 6-tsop is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 1.4w, 1.3w. This product use mosfet (metal oxide) technology. Moreover, it corresponds to si3585, a base product number of the product. The product is designated with the ear99 code number.

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New Solder Plating Site 18/Apr/2023(PCN Assembly/Origin)
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SI3585CDV-T1-GE3(Datasheets)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Vishay Siliconix SI3585CDV-T1-GE3 and the best services all around the world ET11256452. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Vishay Siliconix SI3585CDV-T1-GE3, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Vishay Siliconix, commonly silicon.

Our Vishay Siliconix SI3585CDV-T1-GE3 is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at SI3585CDV-T1-GE3. We stock a large inventory containing a wide range of variety ET11256452, differentiates by its unique features Vishay Siliconix. We also have discounts for potential customers and let it until most of them avail from Vishay Siliconix SI3585CDV-T1-GE3. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET11256452 from leading Vishay Siliconix, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157


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