Diodes Incorporated ZXMN6A25DN8TA

ZXMN6A25DN8TA Diodes Incorporated
ZXMN6A25DN8TA
Diodes Incorporated

Product Information

FET Feature:
Logic Level Gate
Rds On (Max) @ Id, Vgs:
50mOhm @ 3.6A, 10V
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 60V 3.8A 1.8W Surface Mount 8-SO
Input Capacitance (Ciss) (Max) @ Vds:
1063pF @ 30V
Gate Charge (Qg) (Max) @ Vgs:
20.4nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1V @ 250µA (Min)
Drain to Source Voltage (Vdss):
60V
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:
8-SO
Manufacturer Standard Lead Time:
28 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
1.8W
Current - Continuous Drain (Id) @ 25°C:
3.8A
Manufacturer:
Diodes Incorporated
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This is manufactured by Diodes Incorporated. The manufacturer part number is ZXMN6A25DN8TA. The FET features of the product include logic level gate. It has a maximum Rds On and voltage of 50mohm @ 3.6a, 10v. It features mosfet array 2 n-channel (dual) 60v 3.8a 1.8w surface mount 8-so. The product's input capacitance at maximum includes 1063pf @ 30v. The maximum gate charge and given voltages include 20.4nc @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1v @ 250µa (min). The product has a 60v drain to source voltage. Moreover, the product comes in 8-soic (0.154", 3.90mm width). 8-so is the supplier device package value. It has typical 28 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type 2 n-channel (dual). The maximum power of the product is 1.8w. The continuous current drain at 25°C is 3.8a. The diodes incorporated's product offers user-desired applications.

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ZXMN6A25DN8TA(Datasheets)
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Diodes RoHS 3 Cert(Environmental Information)

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