Category:
Power MOSFET
Dimensions:
2.9 x 2.3 x 0.73mm
Maximum Continuous Drain Current:
3 A
Transistor Material:
Si
Width:
2.3mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
2.6V
Package Type:
SOT-28FL, VEC8
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
10 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
505 pF @ 20 V
Length:
2.9mm
Pin Count:
8
Forward Transconductance:
2.6S
Typical Turn-Off Delay Time:
41 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.73mm
Typical Turn-On Delay Time:
7.3 ns
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
116 mΩ
FET Feature:
Logic Level Gate, 4V Drive
Base Part Number:
VEC2415
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 60V 3A 1W Surface Mount SOT-28FL/VEC8
Input Capacitance (Ciss) (Max) @ Vds:
505pF @ 20V
Gate Charge (Qg) (Max) @ Vgs:
10nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.6V @ 1mA
Drain to Source Voltage (Vdss):
60V
Package / Case:
8-SMD, Flat Lead
Rds On (Max) @ Id, Vgs:
80mOhm @ 1.5A, 10V
Supplier Device Package:
SOT-28FL/VEC8
Manufacturer Standard Lead Time:
6 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
1W
Current - Continuous Drain (Id) @ 25°C:
3A
Manufacturer:
ON Semiconductor
