Diodes Incorporated ZXMHN6A07T8TA
Product Information
FET Feature:
Logic Level Gate
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-223-8
Rds On (Max) @ Id, Vgs:
300mOhm @ 1.8A, 10V
Gate Charge (Qg) (Max) @ Vgs:
3.2nC @ 10V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Affected
Current - Continuous Drain (Id) @ 25°C:
1.4A
Configuration:
4 N-Channel (Full Bridge)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
60V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
166pF @ 40V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SM8
Power - Max:
1.6W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
ZXMHN6A07T8
ECCN:
EAR99
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Yes. We ship ZXMHN6A07T8TA Internationally to many countries around the world.
This is manufactured by Diodes Incorporated. The manufacturer part number is ZXMHN6A07T8TA. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sot-223-8. It has a maximum Rds On and voltage of 300mohm @ 1.8a, 10v. The maximum gate charge and given voltages include 3.2nc @ 10v. The product is rohs3 compliant. In addition, it is reach affected. The continuous current drain at 25°C is 1.4a. The product is available in 4 n-channel (full bridge) configuration. It is shipped in tape & reel (tr) package . The product has a 60v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 166pf @ 40v. The product is available in surface mount configuration. sm8 is the supplier device package value. The maximum power of the product is 1.6w. This product use mosfet (metal oxide) technology. Moreover, it corresponds to zxmhn6a07t8, a base product number of the product. The product is designated with the ear99 code number.
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