Diodes Incorporated ZXMC3AMCTA

ZXMC3AMCTA Diodes Incorporated
Diodes Incorporated

Product Information

FET Feature:
Logic Level Gate
Base Part Number:
ZXMC3
Detailed Description:
Mosfet Array N and P-Channel 30V 2.9A, 2.1A 1.7W Surface Mount DFN3020B-8
Input Capacitance (Ciss) (Max) @ Vds:
190pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:
3.9nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
3V @ 250µA
Drain to Source Voltage (Vdss):
30V
Package / Case:
8-WDFN Exposed Pad
Rds On (Max) @ Id, Vgs:
120mOhm @ 2.5A, 10V
Supplier Device Package:
DFN3020B-8
Manufacturer Standard Lead Time:
28 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N and P-Channel
Customer Reference:
Power - Max:
1.7W
Current - Continuous Drain (Id) @ 25°C:
2.9A, 2.1A
Manufacturer:
Diodes Incorporated
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This is manufactured by Diodes Incorporated. The manufacturer part number is ZXMC3AMCTA. The FET features of the product include logic level gate. Base Part Number: zxmc3. It features mosfet array n and p-channel 30v 2.9a, 2.1a 1.7w surface mount dfn3020b-8. The product's input capacitance at maximum includes 190pf @ 25v. The maximum gate charge and given voltages include 3.9nc @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has a 30v drain to source voltage. Moreover, the product comes in 8-wdfn exposed pad. It has a maximum Rds On and voltage of 120mohm @ 2.5a, 10v. dfn3020b-8 is the supplier device package value. It has typical 28 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n and p-channel. The maximum power of the product is 1.7w. The continuous current drain at 25°C is 2.9a, 2.1a. The diodes incorporated's product offers user-desired applications.

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Copper Bond Wire and Wafer Source 07/Nov/2013(PCN Other)
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ZXMC3AMC(Datasheets)
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Diodes RoHS 3 Cert(Environmental Information)
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Mult Dev A/T Site 31/Mar/2021(PCN Assembly/Origin)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Diodes Incorporated ZXMC3AMCTA and the best services all around the world ET11073593. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Diodes Incorporated ZXMC3AMCTA, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Diodes Incorporated, commonly silicon.

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