ON Semiconductor NTJD4158CT1G
Product Information
Maximum Drain Source Voltage:
20 V, 30 V
Typical Gate Charge @ Vgs:
0.9 nC @ 5 V, 2.2 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
270 mW
Maximum Gate Source Voltage:
-20 V, -12 V, +12 V, +20 V
Maximum Gate Threshold Voltage:
1.5V
Height:
1mm
Width:
1.35mm
Length:
2.2mm
Maximum Drain Source Resistance:
2.5 Ω, 500 mΩ
Package Type:
SOT-363 (SC-88)
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
250 mA, 880 mA
Transistor Material:
Si
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
FET Feature:
Logic Level Gate
Base Part Number:
NTJD41
Detailed Description:
Mosfet Array N and P-Channel 30V, 20V 250mA, 880mA 270mW Surface Mount SC-88/SC70-6/SOT-363
Input Capacitance (Ciss) (Max) @ Vds:
33pF @ 5V
Gate Charge (Qg) (Max) @ Vgs:
1.5nC @ 5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.5V @ 100µA
Drain to Source Voltage (Vdss):
30V, 20V
Package / Case:
6-TSSOP, SC-88, SOT-363
Rds On (Max) @ Id, Vgs:
1.5Ohm @ 10mA, 4.5V
Supplier Device Package:
SC-88/SC70-6/SOT-363
Manufacturer Standard Lead Time:
17 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N and P-Channel
Customer Reference:
Power - Max:
270mW
Current - Continuous Drain (Id) @ 25°C:
250mA, 880mA
Manufacturer:
ON Semiconductor
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Yes. Our products in Transistors - FETs, MOSFETs - Arrays category are shipped in lowest possible time.
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Yes. We ship NTJD4158CT1G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is NTJD4158CT1G. It has a maximum of 20 v, 30 v drain source voltage. With a typical gate charge at Vgs includes 0.9 nc @ 5 v, 2.2 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 270 mw maximum power dissipation. It features a maximum gate source voltage of -20 v, -12 v, +12 v, +20 v. The product carries 1.5v of maximum gate threshold voltage. In addition, the height is 1mm. Furthermore, the product is 1.35mm wide. Its accurate length is 2.2mm. It provides up to 2.5 ω, 500 mω maximum drain source resistance. The package is a sort of sot-363 (sc-88). It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 250 ma, 880 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers isolated transistor configuration. The FET features of the product include logic level gate. Base Part Number: ntjd41. It features mosfet array n and p-channel 30v, 20v 250ma, 880ma 270mw surface mount sc-88/sc70-6/sot-363. The product's input capacitance at maximum includes 33pf @ 5v. The maximum gate charge and given voltages include 1.5nc @ 5v. The typical Vgs (th) (max) of the product is 1.5v @ 100µa. The product has a 30v, 20v drain to source voltage. Moreover, the product comes in 6-tssop, sc-88, sot-363. It has a maximum Rds On and voltage of 1.5ohm @ 10ma, 4.5v. sc-88/sc70-6/sot-363 is the supplier device package value. It has typical 17 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n and p-channel. The maximum power of the product is 270mw. The continuous current drain at 25°C is 250ma, 880ma. The on semiconductor's product offers user-desired applications.
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