Microsemi Corporation APTMC60TLM55CT3AG
Product Information
FET Feature:
Silicon Carbide (SiC)
Rds On (Max) @ Id, Vgs:
49mOhm @ 40A, 20V
Detailed Description:
Mosfet Array 4 N-Channel (Three Level Inverter) 1200V (1.2kV) 48A (Tc) 250W Chassis Mount SP3
Input Capacitance (Ciss) (Max) @ Vds:
1900pF @ 1000V
Gate Charge (Qg) (Max) @ Vgs:
98nC @ 20V
Mounting Type:
Chassis Mount
Vgs(th) (Max) @ Id:
2.2V @ 2mA (Typ)
Drain to Source Voltage (Vdss):
1200V (1.2kV)
Package / Case:
SP3
Supplier Device Package:
SP3
Packaging:
Bulk
Operating Temperature:
-40°C ~ 150°C (TJ)
FET Type:
4 N-Channel (Three Level Inverter)
Power - Max:
250W
Current - Continuous Drain (Id) @ 25°C:
48A (Tc)
Manufacturer:
Microsemi Corporation
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This is manufactured by Microsemi Corporation. The manufacturer part number is APTMC60TLM55CT3AG. The FET features of the product include silicon carbide (sic). It has a maximum Rds On and voltage of 49mohm @ 40a, 20v. It features mosfet array 4 n-channel (three level inverter) 1200v (1.2kv) 48a (tc) 250w chassis mount sp3. The product's input capacitance at maximum includes 1900pf @ 1000v. The maximum gate charge and given voltages include 98nc @ 20v. The product is available in chassis mount configuration. The typical Vgs (th) (max) of the product is 2.2v @ 2ma (typ). The product has a 1200v (1.2kv) drain to source voltage. Moreover, the product comes in sp3. sp3 is the supplier device package value. In addition, bulk is the available packaging type of the product. The product has -40°c ~ 150°c (tj) operating temperature range. It carries FET type 4 n-channel (three level inverter). The maximum power of the product is 250w. The continuous current drain at 25°C is 48a (tc). The microsemi corporation's product offers user-desired applications.
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