Microsemi Corporation APTM100A18FTG
Product Information
FET Feature:
Standard
Rds On (Max) @ Id, Vgs:
210mOhm @ 21.5A, 10V
Detailed Description:
Mosfet Array 2 N-Channel (Half Bridge) 1000V (1kV) 43A 780W Chassis Mount SP4
Input Capacitance (Ciss) (Max) @ Vds:
10400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:
372nC @ 10V
Mounting Type:
Chassis Mount
Vgs(th) (Max) @ Id:
5V @ 5mA
Drain to Source Voltage (Vdss):
1000V (1kV)
Package / Case:
SP4
Supplier Device Package:
SP4
Manufacturer Standard Lead Time:
36 Weeks
Packaging:
Bulk
Operating Temperature:
-40°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Half Bridge)
Power - Max:
780W
Current - Continuous Drain (Id) @ 25°C:
43A
Manufacturer:
Microsemi Corporation
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FAQs
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Yes. Our products in Transistors - FETs, MOSFETs - Arrays category are shipped in lowest possible time.
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Yes. We ship APTM100A18FTG Internationally to many countries around the world.
This is manufactured by Microsemi Corporation. The manufacturer part number is APTM100A18FTG. The FET features of the product include standard. It has a maximum Rds On and voltage of 210mohm @ 21.5a, 10v. It features mosfet array 2 n-channel (half bridge) 1000v (1kv) 43a 780w chassis mount sp4. The product's input capacitance at maximum includes 10400pf @ 25v. The maximum gate charge and given voltages include 372nc @ 10v. The product is available in chassis mount configuration. The typical Vgs (th) (max) of the product is 5v @ 5ma. The product has a 1000v (1kv) drain to source voltage. Moreover, the product comes in sp4. sp4 is the supplier device package value. It has typical 36 weeks of manufacturer standard lead time. In addition, bulk is the available packaging type of the product. The product has -40°c ~ 150°c (tj) operating temperature range. It carries FET type 2 n-channel (half bridge). The maximum power of the product is 780w. The continuous current drain at 25°C is 43a. The microsemi corporation's product offers user-desired applications.
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